Analysis the effect of the defect density in CdTe Solar Cell by adding Cu Layer
Abstract
Abstract – Cadmium Telluride (CdTe) solar cells hold the promise of achieving high efficiency. However, the presence of material flaws poses a significant challenge to their effectiveness. These flaws act as recombination sites, capturing electrons and holes and hindering their contribution to the current flow which reduce the performance of CdTe. Addressing these defects becomes crucial for enhancing charge carrier transport and optimizing the efficiency of these solar cells. This research paper have analyzed the effect of the defect density numerically using SCAPS-1D simulation software on SnO2/CdTe/CdS/Cu multi-junction structural solar cell. The performance analyzing parameters of the proposed cell are optimized by varying different numerical particulars. In our analysis we have found that by varying the defect density from to the efficiency of the proposed solar cells varies from 16.5% to 17.7% with keeping same the open circuit voltage at 0.85V, short circuit current 26 mA/cm2, and fill factor 82%. The efficiency has been optimized on account of the conduction band effective density of states, =cm-3, and valance band effective density of states, =cm-3 of the donor material (SnO2). The cell's power conversion efficiency is optimized when the absorber has a balanced concentration of neutral, acceptor, and donor defects at 1 × 1014 cm-3. At an operating temperature of 300 K, it is possible to achieve an efficiency of 18%.
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