Effect of Defect Density Variation in CdTe Solar Cell Using Cu as A Hole Transport Layer and Back Contact

Authors

  • F. T. Johora Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj-8100, Bangladesh
  • M. A. Khan Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj, Bangladesh.
  • A. Al Asad Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj-8100, Bangladesh
  • Md. Rabiul Islam Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj-8100, Bangladesh
  • A. Rayhan Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj-8100, Bangladesh

DOI:

https://doi.org/10.54554/ijeeas.2024.7.02.009

Abstract

Cadmium Telluride (CdTe) solar cells have the potential to achieve high efficiency, but material defects present a significant challenge to their performance. These defects act as recombination sites, capturing electrons and holes, thereby hindering current flow and reducing the overall efficiency of the CdTe solar cells. Addressing these defects is crucial for enhancing charge carrier transport and optimizing efficiency. This research paper analyzes the effect of defect density numerically using SCAPS-1D simulation software on SnO2/CdTe/CdS/Cu multi-junction structural solar cells. The performance parameters of the proposed cell are optimized by varying different numerical particulars. Our analysis reveals that by varying the defect density from 1012 to 1018 cm-3, the efficiency of the proposed solar cells varies from 17.65% to 2.56%, with the open-circuit voltage (Voc) at 0.85V, short-circuit current density (Jsc) at 26 mA/cm², and fill factor (FF) at 82%. The efficiency optimization is attributed to the conduction band effective density of states, Nc = 2.2 x 1018 cm-3, and valence band effective density of states, Nv = 1.8 x 1019 cm-3 of the donor material
(SnO2). The cell's power conversion efficiency is optimized when the absorber has a balanced concentration of neutral, acceptor, and donor defects at 1 x 1014 cm-3. At an operating temperature of 300 K, an efficiency of 18% is achieved.

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Author Biography

M. A. Khan, Bangabandhu Sheikh Mujibur Rahman Science and Technology University, Gopalganj, Bangladesh.

Dept. of Electronics and Telecommunication Engineering, Lecturer.

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Published

2025-03-19

How to Cite

Johora, F. T., Khan, M. A. ., Al Asad, A., Islam, M. R., & Rayhan, A. (2025). Effect of Defect Density Variation in CdTe Solar Cell Using Cu as A Hole Transport Layer and Back Contact. International Journal of Electrical Engineering and Applied Sciences (IJEEAS), 7(2). https://doi.org/10.54554/ijeeas.2024.7.02.009

Issue

Vol. 7 No. 2 (2024): Electrical Engineering and Applied Sciences

Section

Articles

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